STT3434N 6 a, 30 v, r ds(on) 32 m ? n-channel enhancement mode mosfet elektronische bauelemente 30-dec-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe tsop-6 saves board space. ? fast switching speed ? high performance trench technology package information package mpq leadersize tsop-6 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current 1 t a = 25 c i d 6.0 a t a = 70 c 4.6 pulsed drain current 2 i dm 20 a continuous source current (diode conduction) 1 i s 1.6 a power dissipation 1 t a = 25 c p d 2 w t a = 70 c 1.3 operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings maximum junction to ambient 1 t Q 5 sec r ? ja 62.5 c / w steady state 110 notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6 d g d d d s
STT3434N 6 a, 30 v, r ds(on) 32 m ? n-channel enhancement mode mosfet elektronische bauelemente 30-dec-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 0.7 - 1.5 v v ds =v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 8v zero gate voltage drain current i dss - - 1 a v ds = 24v, v gs = 0v - - 10 v ds = 24v, v gs = 0v, t j = 55 c on-state drain current 1 i d(on) 10 - - a v ds = 5v, v gs = 4.5v drain-source on-resistance 1 r ds(on) - - 32 m ? v gs = 4.5v, i d = 6.0a - - 44 v gs = 2.5v, i d = 5.0a forward transconductance 1 g fs - 11.3 - s v ds = 10v, i d = 4.0a diode forward voltage v sd - 0.75 - v i s = 1.6a, v gs = 0v dynamic 2 total gate charge q g - 6 - nc v ds = 10v, v gs = 4.5v, i d = 4.0a gate-source charge q gs - 1 - gate-drain charge q gd - 1.5 - turn-on delay time t d(on) - 8 - ns v dd = 10v, v gen = 4.5v, r l = 15 ? , i d = 1a rise time t r - 24 - turn-off delay time t d(off) - 35 - fall time t f - 10 - notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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